Infineon HEXFET P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP IRF5806TRPBF
- RS Stock No.:
- 145-9508
- Mfr. Part No.:
- IRF5806TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£408.00
(exc. VAT)
£489.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.136 | £408.00 |
*price indicative
- RS Stock No.:
- 145-9508
- Mfr. Part No.:
- IRF5806TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSOP | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 147 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Length | 3.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSOP | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 147 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 8.3 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 3.1mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY