Infineon HEXFET N-Channel MOSFET, 34 A, 150 V, 3-Pin TO-220FP IRFI4321PBF
- RS Stock No.:
- 145-9493
- Mfr. Part No.:
- IRFI4321PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£109.95
(exc. VAT)
£131.95
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.199 | £109.95 |
*price indicative
- RS Stock No.:
- 145-9493
- Mfr. Part No.:
- IRFI4321PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TO-220FP | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 46 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.63mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.83mm | |
| Height | 16.12mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220FP | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 46 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.63mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Height 16.12mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN