Infineon CoolMOS™ C7 N-Channel MOSFET, 13 A, 700 V, 3-Pin TO-220 IPP65R190C7FKSA1
- RS Stock No.:
- 145-9334
- Mfr. Part No.:
- IPP65R190C7FKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£68.10
(exc. VAT)
£81.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £1.362 | £68.10 |
*price indicative
- RS Stock No.:
- 145-9334
- Mfr. Part No.:
- IPP65R190C7FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 72 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 15.95mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-220 | ||
Series CoolMOS™ C7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 72 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 15.95mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.36mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
Height 4.57mm | ||
- COO (Country of Origin):
- CN
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MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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