N-Channel MOSFET, 99 A, 60 V, 3-Pin IPAK Infineon IRLU3636PBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
145-9291
Mfr. Part No.:
IRLU3636PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

33 nC @ 4.5 V

Number of Elements per Chip

1

Length

6.73mm

Width

2.39mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Series

HEXFET

Height

7.49mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.