N-Channel MOSFET, 120 A, 128 A, 75 V, 3-Pin D2PAK Infineon AUIRFS3307Z
- RS Stock No.:
- 145-9221
- Mfr. Part No.:
- AUIRFS3307Z
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£81.30
(exc. VAT)
£97.55
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.626 | £81.30 |
| 100 - 200 | £1.496 | £74.80 |
| 250 + | £1.407 | £70.35 |
*price indicative
- RS Stock No.:
- 145-9221
- Mfr. Part No.:
- AUIRFS3307Z
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A, 128 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 79 nC @ 10 V | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Series | HEXFET | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A, 128 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 79 nC @ 10 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Series HEXFET | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX