Infineon HEXFET N-Channel MOSFET, 97 A, 100 V, 3-Pin D2PAK IRFS4410ZTRLPBF
- RS Stock No.:
- 145-8932
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Brand:
- Infineon
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Subtotal (1 reel of 800 units)*
£808.00
(exc. VAT)
£968.00
(inc. VAT)
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- Shipping from 23 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £1.01 | £808.00 |
| 1600 + | £0.96 | £768.00 |
*price indicative
- RS Stock No.:
- 145-8932
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 97 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Width | 11.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 97 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Width 11.3mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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