N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK Infineon IRF3205LPBF
- RS Stock No.:
- 145-8921
- Mfr. Part No.:
- IRF3205LPBF
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 145-8921
- Mfr. Part No.:
- IRF3205LPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | I2PAK (TO-262) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 146 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Series | HEXFET | |
Height | 9.65mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 146 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Series HEXFET | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||