N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Infineon IRF640NLPBF

RS Stock No.:
145-8857
Mfr. Part No.:
IRF640NLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.67mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Series

HEXFET

Height

11.3mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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