N-Channel MOSFET, 90 mA, 100 V, 3-Pin SOT-23 Infineon BSS169H6906XTSA1
- RS Stock No.:
- 145-8846
- Mfr. Part No.:
- BSS169H6906XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£588.00
(exc. VAT)
£705.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.196 | £588.00 |
| 6000 - 12000 | £0.193 | £579.00 |
| 15000 - 27000 | £0.191 | £573.00 |
| 30000 - 72000 | £0.188 | £564.00 |
| 75000 + | £0.186 | £558.00 |
*price indicative
- RS Stock No.:
- 145-8846
- Mfr. Part No.:
- BSS169H6906XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 2.9V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 7 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Series | SIPMOS | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 2.9V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 2.1 nC @ 7 V | ||
Number of Elements per Chip 1 | ||
Width 1.3mm | ||
Length 2.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Series SIPMOS | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||