N-Channel MOSFET, 6 A, 700 V, 3-Pin TO-247 Infineon IPW65R660CFDFKSA1
- RS Stock No.:
- 145-8742
- Mfr. Part No.:
- IPW65R660CFDFKSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 145-8742
- Mfr. Part No.:
- IPW65R660CFDFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 660 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 62.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Width | 21.1mm | |
| Number of Elements per Chip | 1 | |
| Length | 16.13mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 5.21mm | |
| Series | CoolMOS CFD | |
| Forward Diode Voltage | 0.9V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 660 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 62.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Width 21.1mm | ||
Number of Elements per Chip 1 | ||
Length 16.13mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 5.21mm | ||
Series CoolMOS CFD | ||
Forward Diode Voltage 0.9V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN