Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 120 V, 3-Pin TO-220 IPP048N12N3GXKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.57mm

Typical Gate Charge @ Vgs

137 nC @ 10 V

Length

10.36mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

15.95mm

Forward Diode Voltage

1.2V