N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F onsemi FCPF7N60

RS Stock No.:: 145-4514
Mfr. Part No.:: FCPF7N60
Brand:: onsemi

N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F onsemi FCPF7N60

1 In stock - FREE next working day delivery available

Price Each (In a Tube of 50)

£1.52

(exc. VAT)

£1.82

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	£1.52	£76.00
100 +	£1.429	£71.45

*price indicative

RS Stock No.:: 145-4514
Mfr. Part No.:: FCPF7N60
Brand:: onsemi

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	7 A
Maximum Drain Source Voltage	600 V
Series	SuperFET
Package Type	TO-220F
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	600 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10.16mm
Width	4.7mm
Typical Gate Charge @ Vgs	23 nC @ 10 V
Transistor Material	Si
Height	9.19mm
Minimum Operating Temperature	-55 °C