UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	39 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	UltraFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	35 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	145 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Length	10.67mm
	Typical Gate Charge @ Vgs	56 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	4.7mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Height	16.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 39 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series UltraFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 35 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 145 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Length 10.67mm
	Typical Gate Charge @ Vgs 56 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 4.7mm
	Number of Elements per Chip 1
	Transistor Material Si
	Height 16.3mm
	Minimum Operating Temperature -55 °C

onsemi UltraFET N-Channel MOSFET, 39 A, 100 V, 3-Pin TO-220AB HUF76633P3_F085

UltraFET® MOSFET, Fairchild Semiconductor

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