onsemi UltraFET N-Channel MOSFET, 39 A, 100 V, 3-Pin TO-220AB HUF76633P3_F085

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RS Stock No.:
145-4421
Mfr. Part No.:
HUF76633P3_F085
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

UltraFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

145 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

16.3mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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