Toshiba N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220SIS TK8A50D,S5Q(J
- RS Stock No.:
- 144-5256
- Mfr. Part No.:
- TK8A50D,S5Q(J
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 144-5256
- Mfr. Part No.:
- TK8A50D,S5Q(J
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.85 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 40 W @ 25 °C | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Height | 15mm | |
| Forward Diode Voltage | -1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.85 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W @ 25 °C | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Height 15mm | ||
Forward Diode Voltage -1.7V | ||