Toshiba N-Channel MOSFET, 3.5 A, 600 V, 3-Pin TO-220SIS TK4A60DA(STA4,Q,M)
- RS Stock No.:
- 144-5232
- Mfr. Part No.:
- TK4A60DA(STA4,Q,M)
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 144-5232
- Mfr. Part No.:
- TK4A60DA(STA4,Q,M)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.4V | |
| Minimum Gate Threshold Voltage | 2.4V | |
| Maximum Power Dissipation | 35 W @ 25 °C | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Length | 10mm | |
| Width | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | -1.7V | |
| Height | 15mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.4V | ||
Minimum Gate Threshold Voltage 2.4V | ||
Maximum Power Dissipation 35 W @ 25 °C | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Length 10mm | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage -1.7V | ||
Height 15mm | ||
- COO (Country of Origin):
- JP