onsemi NVD5C688NL-D N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK NVD5C688NLT4G
- RS Stock No.:
- 141-7240P
- Mfr. Part No.:
- NVD5C688NLT4G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a reel)*. Quantities below 150 on continuous strip
£69.50
(exc. VAT)
£83.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,790 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.695 |
| 250 - 490 | £0.603 |
| 500 - 990 | £0.53 |
| 1000 + | £0.482 |
*price indicative
- RS Stock No.:
- 141-7240P
- Mfr. Part No.:
- NVD5C688NLT4G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | NVD5C688NL-D | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 18 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±16 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 2.38mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series NVD5C688NL-D | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 18 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±16 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 7 nC @ 10 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 2.38mm | ||