onsemi NVD5C668NL N-Channel MOSFET, 49 A, 60 V, 3-Pin DPAK NVD5C668NLT4G
- RS Stock No.:
- 141-7216P
- Mfr. Part No.:
- NVD5C668NLT4G
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£78.10
(exc. VAT)
£93.70
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 14,460 left, shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £1.562 |
| 100 - 495 | £1.354 |
| 500 - 995 | £1.19 |
| 1000 + | £1.084 |
*price indicative
- RS Stock No.:
- 141-7216P
- Mfr. Part No.:
- NVD5C668NLT4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 49 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | NVD5C668NL | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 44 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 18.7 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Automotive Standard | AEC-Q101 | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 49 A | ||
Maximum Drain Source Voltage 60 V | ||
Series NVD5C668NL | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 44 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 18.7 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
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