Nexperia PMV45EN2 N-Channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-23 PMV45EN2R
- RS Stock No.:
- 136-4835P
- Mfr. Part No.:
- PMV45EN2R
- Brand:
- Nexperia
Bulk discount available
Subtotal 600 units (supplied on a reel)*
£58.20
(exc. VAT)
£69.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 63,000 unit(s) shipping from 01 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 600 - 1400 | £0.097 |
| 1500 + | £0.084 |
*price indicative
- RS Stock No.:
- 136-4835P
- Mfr. Part No.:
- PMV45EN2R
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | PMV45EN2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 42 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series PMV45EN2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 3.6 nC @ 10 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors