Vishay TrenchFET Dual N-Channel MOSFET, 30 A, 40 V, 8-Pin SO SQJB42EP-T1_GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

48 W

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.25mm

Width

5.26mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

17 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Height

1.12mm