Infineon CoolMOS™ CE N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1

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Packaging Options:
RS Stock No.:
133-9867
Mfr. Part No.:
IPAW60R600CEXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CE

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Length

11.3mm

Width

4.9mm

Minimum Operating Temperature

-40 °C

Height

16.27mm

Forward Diode Voltage

0.9V

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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