N-Channel MOSFET, 10.1 A, 650 V, 3 + Tab-Pin TO-220FP Infineon IPA65R650CEXKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.1 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

86 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C

Series

CoolMOS

Height

16.15mm