Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC0901NSATMA1
- RS Stock No.:
- 133-9798
- Mfr. Part No.:
- BSC0901NSATMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£4.07
(exc. VAT)
£4.885
(inc. VAT)
FREE delivery for orders over £50.00
- Final 55 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.814 | £4.07 |
*price indicative
- RS Stock No.:
- 133-9798
- Mfr. Part No.:
- BSC0901NSATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +20 V | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.35mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TDSON | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5.35mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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