N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC0901NSATMA1

RS Stock No.:
133-6584
Mfr. Part No.:
BSC0901NSATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

6.35mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

44 nC @ 10 V

Length

5.35mm

Number of Elements per Chip

1

Height

1.1mm

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Series

OptiMOS

COO (Country of Origin):
MY

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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