N-Channel MOSFET, 82 A, 25 V, 8-Pin SuperSO Infineon BSC026NE2LS5ATMA1
- RS Stock No.:
- 133-6581
- Mfr. Part No.:
- BSC026NE2LS5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£3,150.00
(exc. VAT)
£3,800.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.63 | £3,150.00 |
*price indicative
- RS Stock No.:
- 133-6581
- Mfr. Part No.:
- BSC026NE2LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 82 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SuperSO | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 29 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +16 V | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Length | 5.49mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Series | OptiMOS 5 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 82 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SuperSO | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 29 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +16 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 5.49mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Series OptiMOS 5 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- MY