ROHM QS6J11 Dual P-Channel MOSFET, 2 A, 12 V, 6-Pin TSMT-6 QS6J11TR
- RS Stock No.:
- 133-3222
- Mfr. Part No.:
- QS6J11TR
- Brand:
- ROHM
Discontinued
- RS Stock No.:
- 133-3222
- Mfr. Part No.:
- QS6J11TR
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | QS6J11 | |
| Package Type | TSMT-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Width | 1.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 6.5 nC @ 4.5 V | |
| Length | 3mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 12 V | ||
Series QS6J11 | ||
Package Type TSMT-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 1.8mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 6.5 nC @ 4.5 V | ||
Length 3mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
Dual P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor