ROHM SCT2H12NZ N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM SCT2H12NZGC11
- RS Stock No.:
- 133-2860P
- Mfr. Part No.:
- SCT2H12NZGC11
- Brand:
- ROHM
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£58.50
(exc. VAT)
£70.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 104 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 18 | £5.85 |
| 20 - 98 | £5.82 |
| 100 - 198 | £5.755 |
| 200 + | £5.65 |
*price indicative
- RS Stock No.:
- 133-2860P
- Mfr. Part No.:
- SCT2H12NZGC11
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.7 A | |
| Maximum Drain Source Voltage | 1700 V | |
| Series | SCT2H12NZ | |
| Package Type | TO-3PFM | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 1.6V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -6 V, +22 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Length | 16mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 18 V | |
| Height | 21mm | |
| Forward Diode Voltage | 4.3V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.7 A | ||
Maximum Drain Source Voltage 1700 V | ||
Series SCT2H12NZ | ||
Package Type TO-3PFM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 1.6V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -6 V, +22 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Length 16mm | ||
Typical Gate Charge @ Vgs 14 nC @ 18 V | ||
Height 21mm | ||
Forward Diode Voltage 4.3V | ||
N-Channel MOSFET Transistors, ROHM
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