ROHM SCT2H12NZ N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM SCT2H12NZGC11
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Brand:
- ROHM
Subtotal (1 pack of 2 units)*
£14.05
(exc. VAT)
£16.86
(inc. VAT)
FREE delivery for orders over £50.00
- 30 left, ready to ship
- Final 106 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £7.025 | £14.05 |
10 - 18 | £5.85 | £11.70 |
20 - 98 | £5.82 | £11.64 |
100 - 198 | £5.755 | £11.51 |
200 + | £5.65 | £11.30 |
*price indicative
- RS Stock No.:
- 133-2860
- Mfr. Part No.:
- SCT2H12NZGC11
- Brand:
- ROHM
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.7 A | |
Maximum Drain Source Voltage | 1700 V | |
Series | SCT2H12NZ | |
Package Type | TO-3PFM | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.5 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 1.6V | |
Maximum Power Dissipation | 35 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -6 V, +22 V | |
Typical Gate Charge @ Vgs | 14 nC @ 18 V | |
Length | 16mm | |
Width | 5mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Forward Diode Voltage | 4.3V | |
Height | 21mm | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.7 A | ||
Maximum Drain Source Voltage 1700 V | ||
Series SCT2H12NZ | ||
Package Type TO-3PFM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 1.6V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -6 V, +22 V | ||
Typical Gate Charge @ Vgs 14 nC @ 18 V | ||
Length 16mm | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 4.3V | ||
Height 21mm | ||
N-Channel MOSFET Transistors, ROHM
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