Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 60 V, 8-Pin TSON TPN22006NH,LQ(S
- RS Stock No.:
- 133-2813
- Mfr. Part No.:
- TPN22006NH,LQ(S
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 133-2813
- Mfr. Part No.:
- TPN22006NH,LQ(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TSON | |
| Series | U-MOSVIII-H | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 64 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 18 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Length | 3.1mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 3.1mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.85mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TSON | ||
Series U-MOSVIII-H | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 64 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 18 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 3.1mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.1mm | ||
Forward Diode Voltage 1.2V | ||
Height 0.85mm | ||