N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
- RS Stock No.:
- 133-0155
- Mfr. Part No.:
- CSD19537Q3T
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.23
(exc. VAT)
£7.475
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | £1.246 | £6.23 |
| 15 - 45 | £1.104 | £5.52 |
| 50 - 245 | £0.926 | £4.63 |
| 250 - 495 | £0.744 | £3.72 |
| 500 + | £0.658 | £3.29 |
*price indicative
- RS Stock No.:
- 133-0155
- Mfr. Part No.:
- CSD19537Q3T
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 53 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | VSON-CLIP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 16.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.6V | |
| Minimum Gate Threshold Voltage | 2.6V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Series | NexFET | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 53 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type VSON-CLIP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.6V | ||
Minimum Gate Threshold Voltage 2.6V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Series NexFET | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||