Infineon HEXFET N-Channel MOSFET, 100 A, 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF
- RS Stock No.:
- 130-0979P
- Mfr. Part No.:
- IRFH5250DTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£29.50
(exc. VAT)
£35.50
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 25 - 45 | £1.18 |
| 50 - 120 | £1.118 |
| 125 - 245 | £1.06 |
| 250 + | £1.018 |
*price indicative
- RS Stock No.:
- 130-0979P
- Mfr. Part No.:
- IRFH5250DTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Series | HEXFET | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 156 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Length | 6mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.85mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Series HEXFET | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 156 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Length 6mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.85mm | ||
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