N-Channel MOSFET, 124 A, 100 V, 9 + Tab-Pin L8 Infineon IRF7769L1TRPBF
- RS Stock No.:
- 130-0956
- Mfr. Part No.:
- IRF7769L1TRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 130-0956
- Mfr. Part No.:
- IRF7769L1TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 124 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | L8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 + Tab | |
| Maximum Drain Source Resistance | 3.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 7.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 8.5mm | |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Series | DirectFET, HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.2mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 124 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type L8 | ||
Mounting Type Surface Mount | ||
Pin Count 9 + Tab | ||
Maximum Drain Source Resistance 3.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 7.1mm | ||
Maximum Operating Temperature +175 °C | ||
Length 8.5mm | ||
Typical Gate Charge @ Vgs 200 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Series DirectFET, HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 5.2mm | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
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