Infineon DirectFET, HEXFET N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC IRF6643TRPBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
130-0946
Mfr. Part No.:
IRF6643TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

34.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.35mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.05mm

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Height

0.59mm