N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC Infineon IRF6643TRPBF

Discontinued product

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	150 V
Series	DirectFET, HEXFET
Package Type	DirectFET ISOMETRIC
Mounting Type	Surface Mount
Maximum Drain Source Resistance	34.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.9V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	89 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	39 nC @ 10 V
Length	6.35mm
Width	5.05mm
Height	0.59mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-40 °C

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