Infineon DirectFET, HEXFET N-Channel MOSFET, 35 A, 150 V DirectFET ISOMETRIC IRF6643TRPBF
- RS Stock No.:
- 130-0946
- Mfr. Part No.:
- IRF6643TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 130-0946
- Mfr. Part No.:
- IRF6643TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | DirectFET, HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 34.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 89 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.35mm | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.05mm | |
| Height | 0.59mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 34.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 89 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.35mm | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 5.05mm | ||
Height 0.59mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -40 °C | ||