N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK Infineon IRF40R207

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
130-0944
Mfr. Part No.:
IRF40R207
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Forward Diode Voltage

1.3V

Series

HEXFET

Height

2.41mm

Minimum Operating Temperature

-55 °C

StrongIRFET™ Power MOSFET, Infineon


Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.