Infineon HEXFET N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRF100B202
- RS Stock No.:
- 130-0935
- Mfr. Part No.:
- IRF100B202
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 130-0935
- Mfr. Part No.:
- IRF100B202
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 97 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8.6 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 221 W | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 77 nC @ 10 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 16.51mm | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 97 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 221 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 77 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
Forward Diode Voltage 1.3V | ||
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