N-Channel MOSFET, 6.8 A, 650 V, 3 + Tab-Pin SOT-223 Infineon IPN60R1K0CEATMA1

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Packaging Options:
RS Stock No.:
130-0917
Mfr. Part No.:
IPN60R1K0CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

5 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.7mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.7mm

Number of Elements per Chip

1

Height

1.7mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.