Infineon CoolMOS™ CE 1 N-Channel MOSFET, 8.4 A, 650 V Enhancement, 3-Pin TO-252 IPD60R800CEAUMA1
- RS Stock No.:
- 130-0902
- Mfr. Part No.:
- IPD60R800CEAUMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 130-0902
- Mfr. Part No.:
- IPD60R800CEAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS™ CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30V, -30V | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS™ CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30V, -30V | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Height 2.41mm | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.