Toshiba DTMOSIV N-Channel MOSFET, 7.8 A, 650 V, 3-Pin IPAK TK8Q65W,S1Q(S
- RS Stock No.:
- 125-0599
- Mfr. Part No.:
- TK8Q65W,S1Q(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.19
(exc. VAT)
£6.23
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.038 | £5.19 |
| 25 - 45 | £0.622 | £3.11 |
| 50 - 120 | £0.576 | £2.88 |
| 125 - 245 | £0.568 | £2.84 |
| 250 + | £0.56 | £2.80 |
*price indicative
- RS Stock No.:
- 125-0599
- Mfr. Part No.:
- TK8Q65W,S1Q(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | DTMOSIV | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 670 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 80 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 2.3mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
| Length | 6.65mm | |
| Forward Diode Voltage | 1.7V | |
| Height | 7.12mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Series DTMOSIV | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 670 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 80 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 2.3mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Length 6.65mm | ||
Forward Diode Voltage 1.7V | ||
Height 7.12mm | ||