Toshiba DTMOSIV N-Channel MOSFET, 6.2 A, 600 V, 3-Pin IPAK TK6Q60W,S1VQ(S
- RS Stock No.:
- 125-0589
- Mfr. Part No.:
- TK6Q60W,S1VQ(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
£1.91
(exc. VAT)
£2.29
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.191 | £1.91 |
| 50 + | £0.185 | £1.85 |
*price indicative
- RS Stock No.:
- 125-0589
- Mfr. Part No.:
- TK6Q60W,S1VQ(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | DTMOSIV | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 820 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 60 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 6.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 2.3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Forward Diode Voltage | 1.7V | |
| Height | 7.12mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 600 V | ||
Series DTMOSIV | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 820 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 60 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 6.65mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 2.3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Forward Diode Voltage 1.7V | ||
Height 7.12mm | ||