Toshiba U-MOSVIII-H N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1,S1X(S
- RS Stock No.:
- 125-0579
- Mfr. Part No.:
- TK58E06N1,S1X(S
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 125-0579
- Mfr. Part No.:
- TK58E06N1,S1X(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 105 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.16mm | |
| Width | 4.45mm | |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 15.1mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 105 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.16mm | ||
Width 4.45mm | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 15.1mm | ||
Forward Diode Voltage 1.2V | ||