Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin I2PAK TK16C60W,S1VQ(S2
- RS Stock No.:
- 125-0540
- Mfr. Part No.:
- TK16C60W,S1VQ(S2
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 125-0540
- Mfr. Part No.:
- TK16C60W,S1VQ(S2
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
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Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | DTMOSIV | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 130 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Length | 10mm | |
| Width | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Height | 10.4mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 15.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Series DTMOSIV | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 130 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Length 10mm | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Height 10.4mm | ||
Forward Diode Voltage 1.7V | ||