N-Channel MOSFET, 120 A, 120 V, 3-Pin D2PAK Infineon IPB038N12N3GATMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
124-9043
Mfr. Part No.:
IPB038N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

120 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.31mm

Transistor Material

Si

Typical Gate Charge @ Vgs

158 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Series

OptiMOS 3

Height

4.57mm

COO (Country of Origin):
DE