N-Channel MOSFET, 100 A, 100 V, 3-Pin D2PAK Infineon IPB042N10N3GATMA1

RS Stock No.:
124-8768
Mfr. Part No.:
IPB042N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

88 nC @ 10 V

Number of Elements per Chip

1

Width

9.45mm

Maximum Operating Temperature

+175 °C

Length

10.31mm

Series

OptiMOS 3

Height

4.57mm

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

COO (Country of Origin):
CN

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy