P-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK Infineon IPD90P04P405ATMA1
- RS Stock No.:
- 124-8766
- Mfr. Part No.:
- IPD90P04P405ATMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 124-8766
- Mfr. Part No.:
- IPD90P04P405ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Width | 6.22mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 6.73mm |
| Minimum Operating Temperature | -55 °C |
| Series | OptiMOS P |
| Height | 2.41mm |
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