P-Channel MOSFET, 9.2 A, 30 V, 8-Pin SOIC Infineon IRF9333TRPBF

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V, 25 nC @ 10 V

Length

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

1.5mm