ROHM RE1C002UN N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 RE1C002UNTCL
- RS Stock No.:
- 124-6784
- Mfr. Part No.:
- RE1C002UNTCL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 150 units)*
£7.35
(exc. VAT)
£8.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 750 unit(s) ready to ship
- Plus 1,800 unit(s) shipping from 10 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | £0.049 | £7.35 |
| 750 - 1350 | £0.046 | £6.90 |
| 1500 - 3600 | £0.044 | £6.60 |
| 3750 - 7350 | £0.043 | £6.45 |
| 7500 + | £0.042 | £6.30 |
*price indicative
- RS Stock No.:
- 124-6784
- Mfr. Part No.:
- RE1C002UNTCL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Series | RE1C002UN | |
| Package Type | SC-75 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 150 mW | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.7mm | |
| Width | 0.96mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series RE1C002UN | ||
Package Type SC-75 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 150 mW | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 1.7mm | ||
Width 0.96mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
Forward Diode Voltage 1.2V | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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