Renesas N-Channel MOSFET, 3 A, 900 V, 3 + Tab-Pin TO-3P 2SK1339-E
- RS Stock No.:
- 124-3649
- Mfr. Part No.:
- 2SK1339-E
- Brand:
- Renesas Electronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 124-3649
- Mfr. Part No.:
- 2SK1339-E
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 7 Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 15.6mm | |
| Width | 4.8mm | |
| Height | 19.9mm | |
| Forward Diode Voltage | 0.9V | |
Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 7 Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 15.6mm | ||
Width 4.8mm | ||
Height 19.9mm | ||
Forward Diode Voltage 0.9V | ||
- COO (Country of Origin):
- JP
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