onsemi UltraFET N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK HUFA76429D3ST-F085
- RS Stock No.:
- 124-1427
- Mfr. Part No.:
- HUFA76429D3ST-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 2500 units)*
£1,012.50
(exc. VAT)
£1,215.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | £0.405 | £1,012.50 |
| 7500 + | £0.395 | £987.50 |
*price indicative
- RS Stock No.:
- 124-1427
- Mfr. Part No.:
- HUFA76429D3ST-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | UltraFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Series UltraFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- US