N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB Infineon IRF60B217

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RS Stock No.:
123-6144
Mfr. Part No.:
IRF60B217
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

44 nC @ 10 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.67mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Series

StrongIRFET

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

16.51mm

StrongIRFET™ Power MOSFET, Infineon


Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.