Vishay P-Channel MOSFET, 13.4 A, 20 V, 8-Pin SOIC SI4403CDY-T1-GE3
- RS Stock No.:
- 121-9657P
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£45.70
(exc. VAT)
£54.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,490 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.457 |
| 250 - 490 | £0.413 |
| 500 - 990 | £0.389 |
| 1000 + | £0.365 |
*price indicative
- RS Stock No.:
- 121-9657P
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 13.4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 8 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 13.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 8 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor