Dual N-Channel MOSFET, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2415-TL-W
- RS Stock No.:
- 121-7892
- Mfr. Part No.:
- VEC2415-TL-W
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal (1 pack of 10 units)*
£3.30
(exc. VAT)
£4.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.33 | £3.30 |
| 50 - 190 | £0.28 | £2.80 |
| 200 - 490 | £0.248 | £2.48 |
| 500 + | £0.228 | £2.28 |
*price indicative
- RS Stock No.:
- 121-7892
- Mfr. Part No.:
- VEC2415-TL-W
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-28FL, VEC8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 116 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 2.9mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.3mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Height | 0.73mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-28FL, VEC8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 116 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 2.3mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Height 0.73mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN